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APTM100DU18T
Dual Common Source MOSFET Power Module
D1 Q1 D2 Q2
VDSS = 1000V RDSon = 180m max @ Tj = 25C ID = 43A @ Tc = 25C
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies
G1
G2
S1 S NTC1
S2
NTC2
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile
G2 S2
D2
D1
S
D2
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM100DU18T- Rev 0
July, 2004
Tc = 25C
Max ratings 1000 43 33 172 30 180 780 25 50 3000
Unit V A V m W A
APTM100DU18T
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 500A
VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25C T j = 125C
Min 1000
Typ
Max 500 2000 180 5 150
Unit V A m V nA
VGS = 10V, ID = 21.5A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 43A Inductive switching @ 125C VGS = 15V VBus = 670V ID = 43A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5
Min
Typ 10.4 1.76 0.32 372 48 244 18 12 155 40 1800 1246 2846 1558
Max
Unit nF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Reverse Recovery Time Qrr Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ
VGS = 0V, IS = - 43A IS = - 43A, VR = 500V diS/dt = 200A/s 1170 32.5
Max 43 33 1.3 10
Unit A V V/ns ns C
July, 2004 2-6 APTM100DU18T- Rev 0
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 43A di/dt 700A/s VR VDSS Tj 150C
APT website - http://www.advancedpower.com
APTM100DU18T
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40
Typ
Max 0.16 150 125 100 4.7 160
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
Min
Typ 68 4080
Max
Unit k K
RT =
R 25 1 1 exp B25 / 85 T - T 25
T: Thermistor temperature RT : Thermistor value at T
Package outline
APT website - http://www.advancedpower.com
3-6
APTM100DU18T- Rev 0
July, 2004
APTM100DU18T
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.7 0.5 0.3 0.9
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 120
VGS =15, 10&8V
Transfert Characteristics 160 140 ID, Drain Current (A) 120 100 80 60 40 20 0 30 0 1 2 3 4 5 TJ =25C TJ =125C TJ =-55C 6 7 8 9
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
100 80 60 40 20 0 0 5 10 15 20
7V
6.5V 6V
5.5V 5V
25
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 21.5A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 45 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150
July, 2004
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V
VGS=20V
20
40
60
80
100
120
ID, Drain Current (A)
TC, Case Temperature (C)
APT website - http://www.advancedpower.com
4-6
APTM100DU18T- Rev 0
APTM100DU18T
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 12 10 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC)
July, 2004
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=21.5A
1000
100s
100
limited by R DSon 1ms
10 Single pulse TJ =150C 1 1 10 100 1000 VDS , Drain to Source Voltage (V)
10ms
Gate Charge vs Gate to Source Voltage I D=43A TJ=25C
VDS=200V VDS=500V VDS=800V
APT website - http://www.advancedpower.com
5-6
APTM100DU18T- Rev 0
APTM100DU18T
Delay Times vs Current 200 td(on) and td(off) (ns) 160 120 80 40 0 10 30 50 70 90 I D, Drain Current (A) Switching Energy vs Current
V DS=670V RG =2.5 T J=125C L=100H
Rise and Fall times vs Current 80
V DS =670V RG =2.5 T J=125C L=100H
t d(off) tr and tf (ns)
tf
60
40 tr 20
t d(on)
0 10 30 50 70 I D, Drain Current (A) 90
Switching Energy vs Gate Resistance
5
Switching Energy (mJ)
7
Switching Energy (mJ)
VDS=670V RG=2.5 TJ=125C L=100H
Eon
4 3 2 1 0
6 5 4 3 2 1 0 0
Eoff
V DS =670V ID=43A T J=125C L=100H
Eoff
Eon
10
30
50
70
90
5
10
15
20
I D, Drain Current (A) Operating Frequency vs Drain Current I DR, Reverse Drain Current (A)
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
250 200
Frequency (kHz)
ZVS ZCS
1000
100
150 100 50 0 10 15
VDS=670V D=50% RG=2.5 T J=125C Tc=75C
TJ=150C TJ=25C
10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
July, 2004
20 25 30 35 ID, Drain Current (A)
40
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
6-6
APTM100DU18T- Rev 0
APT reserves the right to change, without notice, the specifications and information contained herein

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